MIC4426/4427/4428
Absolute Maximum Ratings (1)
Supply Voltage (V S ) ..................................................... +22V
Input Voltage (V IN ) .......................... V S + 0.3V to GND – 5V
Junction Temperature (T J ) ......................................... 150°C
Storage Temperature ................................ –65°C to +150°C
Lead Temperature (10 sec.) ...................................... 300°C
ESD Rating (3)
Electrical Characteristics (4)
Micrel, Inc.
Operating Ratings (2)
Supply Voltage (V S ) ...................................... +4.5V to +18V
Temperature Range (T A )
(A) ......................................................... –55°C to +125°C
(B) ........................................................... –40°C to +85°C
Package Thermal Resistance
PDIP θ JA .......................................................................... 130°C/W
PDIP θ JC ............................................................................ 42°C/W
SOIC θ JA ........................................................... 120°C/W
SOIC θ JC ............................................................ 75°C/W
MSOP θ JA ......................................................... 250°C/W
4.5V ≤ V s ≤ 18V; T A = 25°C, bold values indicate full speci?ed temperature range; unless noted.
Symbol Parameter Condition
Min
Typ
Max
Units
Input
V IH
Logic 1 Input Voltage
2.4
2.4
1.4
1.5
V
V
V IL
Logic 0 Input Voltage
1.1
1.0
0.8
0.8
V
V
I IN
Output
Input Current
0 ≤ V IN ≤ V S
–1
1
μA
V OH
V OL
R O
I PK
I
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
I OUT = 10mA, V S = 18V
withstand reverse current
V S –0.025
>500
6
8
1.5
0.025
10
12
V
V
Ω
Ω
A
mA
Switching Time
t R
t F
t D1
t D2
t PW
Power Supply
Rise Time
Fall Time
Delay Tlme
Delay Time
Pulse Width
test Figure 1
test Figure 1
test Flgure 1
test Figure 1
test Figure 1
400
18
20
15
29
17
19
23
27
30
40
20
40
30
40
50
60
ns
ns
ns
ns
ns
ns
ns
ns
ns
I S
I S
Power Supply Current
Power Supply Current
V INA = V INB = 3.0V
V INA = V INB = 0.0V
0.6
1.4
1.5
0.18
0.19
4.5
8
0.4
0.6
mA
mA
mA
mA
Notes:
1. Exceeding the absolute maximum rating may damage the device.
2. The device is not guaranteed to function outside its operating rating.
3. Devices are ESD sensitive. Handling precautions recommended.
4. Speci?cation for packaged product only.
M9999-042108
4
April 2008
相关PDF资料
MIC4451ZT IC DRIVER MOSFET 12A HS TO220-5
MIC4467YWM IC DRIVER MOSF QUAD 1.2A 16-SOIC
MIC44F19YMME IC MOSFET DRIVER 6A HS 8-MSOP
MIC4801YM IC WHITE LED DVR 600MA 1CH 8SOIC
MIC4802YME IC WHITE LED DVR 800MA 1CH 8SOIC
MIC4807BN IC DRIVER 80V 8CH ADDRESS 18-DIP
MIC4811YMM IC WHITE LED DVR HC 6CH 10MSOP
MIC4812YMME IC WHITE LED DVR HC 6CH 10MSOP
相关代理商/技术参数
MIC4427YM TR 功能描述:功率驱动器IC 1.5A Dual High Speed MOSFET Driver (Pb-Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MIC4427YM 制造商:Micrel Inc 功能描述:MOSFET Driver IC
MIC4427YMM 功能描述:功率驱动器IC 1.5A Dual High Speed MOSFET Driver (Pb-Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MIC4427YMM TR 功能描述:功率驱动器IC 1.5A Dual High Speed MOSFET Driver (Pb-Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MIC4427YMMTR 制造商:Micrel 功能描述:MOSFET Driver 0.025V 1.5A Non-Inv
MIC4427YMM-TR 功能描述:IC DRIVER MOSFET 1.5A DUAL 8MSOP 制造商:microchip technology 系列:- 包装:剪切带(CT) 零件状态:有效 驱动配置:低压侧 通道类型:独立式 驱动器数:2 栅极类型:N 沟道,P 沟道 MOSFET 电压 - 电源:4.5 V ~ 18 V 逻辑电压?- VIL,VIH:0.8V,2.4V 电流 - 峰值输出(灌入,拉出):1.5A,1.5A 输入类型:非反相 高压侧电压 - 最大值(自举):- 上升/下降时间(典型值):20ns,29ns 工作温度:-40°C ~ 150°C(TJ) 安装类型:表面贴装 封装/外壳:8-TSSOP,8-MSOP(0.118",3.00mm 宽) 供应商器件封装:8-MSOP 标准包装:1
MIC4427YMTR 制造商:Micrel 功能描述:MOSFET Driver 0.025V 1.5A Non-Inv
MIC4427YM-TR 功能描述:IC DRIVER MOSFET 1.5A DUAL 8SOIC 制造商:microchip technology 系列:- 包装:剪切带(CT) 零件状态:有效 驱动配置:低压侧 通道类型:独立式 驱动器数:2 栅极类型:N 沟道,P 沟道 MOSFET 电压 - 电源:4.5 V ~ 18 V 逻辑电压?- VIL,VIH:0.8V,2.4V 电流 - 峰值输出(灌入,拉出):1.5A,1.5A 输入类型:非反相 高压侧电压 - 最大值(自举):- 上升/下降时间(典型值):20ns,29ns 工作温度:-40°C ~ 150°C(TJ) 安装类型:表面贴装 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商器件封装:8-SOIC 标准包装:1